STW18NM80 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STW18NM80

N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

STB18NM80, STF18NM80, STP18NM80, STW18NM80

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 400 V, ID = 8.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16 and

Figure 21)

Min.

-

Typ.

18

28

96

50

Max. Unit

ns

ns

-

ns

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD(2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, VGS = 0

ISD = 17 A, di/dt = 100

A/µs, VDD = 100 V,

(see Figure 18)

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A,

di/dt = 100 A/µs,

VDD = 100 V, Tj=150°C

(see Figure 18)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min.

-

-

-

Typ.

618

9.6

31.2

Max. Unit

17 A

68 A

1.6 V

ns

µC

A

822

ns

-

13

µC

31.8

A

Doc ID 15421 Rev 5

5/21

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