TGA1342-EPU(2001) 查看數據表（PDF） - TriQuint Semiconductor
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TGA1342-EPU Datasheet PDF : 8 Pages
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Advance Product Information
2 -20 GHz Wideband AGC Amplifier
TGA1342-EPU
September 13, 2001
Key Features and Performance
• 0.5 um MESFET Technology
• 9 dB Nominal Gain
• 3.5 dB NF Typical Midband
• 17.5 dBm Nominal Pout @ P1dB
• Bias 5-8V @ 60 mA
• Dimensions 3.378mm x 2.032mm
Chip Dimensions: 3.378mm x 2.032mm
Typical Electrical Characteristics
Primary Applications
• Wideband Gain Block Amplifier
• Wideband Low Noise Amplifier
12.0
10.0
8.0
6.0
4.0
2
S21 Gain (dB)
VD = 6v Id =60 mA Temp = 25C
4 6 8 10 12 14 16 18 20
Frequency (GHz)
S11 Input Return Loss (dB)
VD = 6v Id =60 mA Temp = 25C
0.0
-10.0
-20.0
-30.0
-40.0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
6.0
5.0
4.0
3.0
2.0
1.0
2
Noise Figure (dB)
VD=6v Id=60ma Temp=25C
4 6 8 10 12 14 16 18
Frequency (GHz)
S22 Output Return Loss (dB)
VD = 6v Id =60 mA Temp = 25C
0.0
-10.0
-20.0
-30.0
-40.0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
rev 11/10/98
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