IRHN4450 查看數據表（PDF） - International Rectifier
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IRHN4450 Datasheet PDF : 12 Pages
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Radiation
Characteristics
IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a VDS bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 105 Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHN7450. Post-irradiation limits of the de-
vices irradiated to 1 x 106 Rads (Si) are presented in
Table 1, column 2, IRHN8450. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide a
direct comparison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRHN7450 IRHN8450
100K Rads (Si) 1000K Rads (Si) Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 — 500 — V
VGS(th) Gate Threshold Voltage
2.0 4.0 1.25 4.5
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
IGSS
IGSS
Gate-to-Source Leakage Forward — 100 — 100 nA
Gate-to-Source Leakage Reverse — -100 — -100
VGS = 20V
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
RDS(on)1 Static Drain-to-Source
— 50 —
— 0.45 —
50 µA VDS=0.8 x Max Rating, VGS =0V
0.6 Ω
VGS = 12V, ID = 7.0A
On-State Resistance One
VSD
Diode Forward Voltage
— 1.6 — 1.6 V TC = 25°C, IS =11A,VGS = 0V
Table 2. High Dose Rate
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Test Conditions
— — 400 — — 400 V Applied drain-to-source voltage during
gamma-dot
— 8 — — 8 — A Peak radiation induced photo-current
— — 15 — — 3 A/µsec Rate of rise of photo-current
27 — — 133 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si)
Ion
(MeV/mg/cm2)
Ni
28
Fluence
(ions/cm2)
3x 105
Range
(µm)
~41
VDSBias
(V)
275
VGS Bias
(V)
-5
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