IRHN4450 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRHN4450

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices

Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc

Radiation

Characteristics

Fig 10. Typical Output Characteristics

Pre-Irradiation

Fig 11. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 12. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

6

Fig 13. Typical Output Characteristics

Post-Irradiation 1 Mega Rads(Si)

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