IRHN4450 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRHN4450

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

Post-Irradiation

IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 8a. Gate Stress of

VGSS Equals 12 Volts

During Radiation

Fig 7. Typical Transient Response

of Rad Hard HEXFET During

1x1012 Rad (Si)/Sec Exposure

Fig 8b. VDSS Stress

Equals 80% of BVDSS

During Radiation

Fig 9.HighDoseRate

(Gamma Dot) Test Circuit

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