BSM 191
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Power dissipation Ptot = f (TC)
parameter: Tj = 150 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Safe operating area ID = f (VDS)
parameter: single pulse, TC = 25 ˚C
Tj ≤ 150 ˚C
Typ. transfer characteristic ID = f (VGS)
parameter: tp = 80 µs , VDS = 25 V
Semiconductor Group
74