C67076-A1009-A2 查看數據表（PDF） - Siemens AG
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C67076-A1009-A2 Datasheet PDF : 7 Pages
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BSM 191
Typ. drain-source on-state resistance
RDS(on) = f (ID)
parameter: VGS
Drain-source on-state resistance
ROS(on) = f (Tj)
parameter: ID = 18 A; VGS = 10 V, (spread)
Gate threshold voltage
V = GS(th) f (Tj)
parameter: VDS = VGS , ID = 1 mA
Drain current ID = f (TC)
parameter: VGS ≥ 10 V, Tj = 150 ˚C
Semiconductor Group
75
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