C67076-A1009-A2 查看數據表（PDF） - Siemens AG
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C67076-A1009-A2 Datasheet PDF : 7 Pages
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Drain-source breakdown voltage
V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C)
BSM 191
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f =1 MHz (spread)
Forward characteristics
of reverse diode IF = f (VSD)
parameter: Tj, tp = 80 µs (spread)
Semiconductor Group
76
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