TGA1135B 查看數據表（PDF） - TriQuint Semiconductor
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TGA1135B Datasheet PDF : 8 Pages
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Advance Product Information
Feb 4, 2000
TGA1135B
VG1
VG2
GND
DQ
VD
DET
OUT
RF IN
Reference
diode 2
Q1a
600µm
Q1b
600µm
Q2a
1200µm
Note:
drains not
connected
on lot
9931503
Q2b
1200µm
PWR
DET
RF OUT
Reference
diode 1
REF3
GND
VG1
VG2
GND
DQ
VD
REF1
Note: no DC current
Note: If drain bias is from one side
allowed into the “DQ” pad
only, maximum Id is 440mA
REF2
DC Schematic
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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