TGA1135B 查看數據表（PDF） - TriQuint Semiconductor
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TGA1135B Datasheet PDF : 8 Pages
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Advance Product Information
Feb 4, 2000
TGA1135B
Vg (optional)
0.01µF
0.01µF
DQ
Vd
100pF
100pF
Input TFN
Vg
100pF
0.01µF
Output TFN
DQ
0.01µF
100pF
Vd
Notes:
1. 1µF capacitor on gate, drain lines not
shown but required
2. 0.01µF capacitor may be connected to
“DQ” port as shown, or may be included
on drain line
3. Vg connection is recommended on
both sides for devices operating at or
above P1dB
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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