BB101M 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB101M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-504

1st. Edition

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,

Rs = 0 conditions.

Outline

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

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