BB101M 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB101M Datasheet PDF : 11 Pages
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Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
VDS = VG1 = 5 V
20
15
10
5
100 1k2Ω10512k082332Ω07k39000kΩ0kΩkkkΩΩΩΩ
R G = 470 k Ω
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
BB101M
Typical Output Characteristics
25
VG2S = 4 V
20 VG1 = VDS
15
10
5
1232310129753k82000000ΩkkkkkkΩΩΩΩΩΩ
RG = 470 kΩ
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 150 kΩ
16
4V
12
3V
2V
8
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
5
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