BB101M 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB101M Datasheet PDF : 11 Pages
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BB101M
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
16 RG = 220 kΩ
12
4V
3V
8
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 150 kΩ
20 f = 1 kHz
4V
3V
15
2V
10
5
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Drain Current vs.Gate1 Voltege
20
VDS = 5 V
RG = 390 kΩ
16
12
8
4V
3V
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 220 kΩ
20 f = 1 kHz
4V
3V
15
2V
10
5
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
6
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