Philips Semiconductors
NPN microwave power transistor
Product specification
LLE18300X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base Tj = 100 °C
thermal resistance from mounting base to heatsink
MAX.
2
0.2
UNIT
K/W
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
V(BR)CER
V(BR)CBO
V(BR)EBO
hFE
PARAMETER
collector cut-off current
collector-emitter breakdown voltage
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
CONDITIONS
IE = 0; VCB = 20 V
IC = 15 mA; RBE = 220 Ω
IC = 15 mA
IE = 15 mA
IC = 1 A; VCE = 3 V
MIN.
−
30
45
3
15
MAX.
3
−
−
−
100
UNIT
mA
V
V
V
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF
OPERATION
f
(GHz)
Class AB (CW) 1.85
VCE
(V)
24
ICQ
(A)
0.1
PL1
(W)
≥27
typ. 30
Gpo
(dB)
≥7.8
typ. 8.6
ηC
(%)
typ. 40
Zi; ZL
(Ω)
see Figs 8
and 9
1999 Apr 22
4