LLE18300X 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

比赛名单

LLE18300X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LLE18300X

handbook, full pagewidth

BIAS CIRCUIT

R1

TR1

R2

P1

D1

R3 C7

D2

PREMATCHING TEST

CIRCUIT

VCC

C6

C5

F1

L2

L1

DUT

Fig.5 Class AB bias circuit.

MEA600

List of components (see Figs 4 and 5).

COMPONENT

DESCRIPTION

TR1

transistor, BDT91 or equivalent

C1, C4

DC blocking chip capacitor

C2, C3

trimmer capacitor

C5, C6

feedthrough bypass capacitor

C7

electrolytic capacitor

D1

diode BY239 or equivalent; 1

D2

diode BY239 or equivalent; 2

L1

4 turns 0.5 mm copper wire;

internal diameter = 2 mm

L2

3 turns 0.5 mm copper wire;

internal diameter = 2 mm

P1

linear potentiometer

R1

resistor

R2

resistor

R3

resistor

F1

ferrite bead

Rr

copper rivet

Notes

1. In thermal contact with TR1.

2. In thermal contact with DUT.

1999 Apr 22

VALUE

ORDERING INFORMATION

100 pF

0.5 to 5.0 pF

1500 pF

10 µF, >30 V

ATC 100A101kp

Tekelec 727-1

Erie 1250-003

4.7 kΩ

100 Ω, 0.25 W

10 kΩ, 0.25 W

56 Ω, 0.25 W

Philips tube, 12NC = 4330 030 43081

4.2 x 2.2 x 3.2 mm (4B1)

6

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