LLE18300X 查看數據表（PDF） - Philips Electronics
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LLE18300X Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LLE18300X
handbook,4h0alfpage
PL
(W)
30
20
10
0
0
2
MEA579
I CQ =
100 mA
50 mA
10 mA
4
Pi (W) 6
handbook,2h0alfpage
d im
(dBc)
25
I CQ =
10 mA
30
50 mA
35
100 mA
40
45
0
5
MBD733
10
15
20
Po (av) (W)
VCE = 24 V; f = 1850 MHz.
Fig.6 Load power as a function of input power.
VCE = 24 V; f1 = 1850 MHz; f2 = 1850.2 MHz.
Fig.7 Intermodulation distortion as a function
of average output power.
Input and optimum load impedances.
VCE = 24 V; ICQ = 0.1 A; Zo = 10 Ω (see Figs 8 and 9); typical values at PL = PL1.
f
Zi
ZL
(GHz)
(Ω)
(Ω)
1.70
5.6 + j4.0
3.0 - j1.6
1.75
6.4 + j2.7
2.7 - j1.7
1.80
6.3 + j1.1
2.4 - j1.8
1.85
5.5 + j0.2
2.2 - j1.9
1.90
4.4 − j0.8
2.0 - j2.1
1.95
3.4 - j1.0
1.8 - j2.3
2.00
2.6 - j0.8
1.7 - j2.5
1999 Apr 22
7
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