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1214-300 数据手册 ( 数据表 ) - GHz Technology

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零件编号
1214-300

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GHz Technology GHz-Technology

GENERAL DESCRIPTION
The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

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零件编号
产品描述 (功能)
PDF
生产厂家
300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
Microsemi Corporation
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
Advanced Power Technology
300 Watts - 40 Volts, 150µs, 10% Radar 1200 - 1400 MHz
Microsemi Corporation
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
Advanced Power Technology
100 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz
GHz Technology
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty ( Rev : V2 )
HVVi Semiconductors, Inc.
170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz
Advanced Power Technology
170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz
Microsemi Corporation
125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz
Advanced Power Technology

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