13NM60N(2011) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
13NM60N
Other PDF
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page
14 Pages
File Size
803.6 kB
生产厂家
STMicroelectronics
Description
This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
Switching applications
零件编号
产品描述 (功能)
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生产厂家
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