STL24N60M2(2014) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STL24N60M2
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page
16 Pages
File Size
1.2 MB
生产厂家
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener protected
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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生产厂家
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