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New Jersey Semiconductor
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The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.
FEATUREs:
• SOA ispower-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input Impedance
• Majority carrier device
N-Channel Enhancement-Mode Power Field-Effect Transistors
New Jersey Semiconductor
N-CHANNEL Enhancement mode Power Field Effect Transistors
Motorola => Freescale
N-Channel Enhancement-Mode Power Field-Effect Transistors
GE Solid State
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
GE Solid State
N-Channel Enhancement Mode Power Field Effect Transistors
Intersil
N-CHANNEL ENHANCEMENT-MODE Power MOS Field-Effect Transistor
New Jersey Semiconductor
N-Channel Enhancement-Mode Power MOS Field-Effect Transistor
New Jersey Semiconductor
N-Channel logic enhancement mode power field effect transistors
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
MOS Field Effect Power Transistors / N-Channel
NEC => Renesas Technology
P-Channel Enhancement - Mode Power Field-Effect Transistors
GE Solid State