The 2N6786 is an n-channel enhancement-mode silicon-gate power MOS field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. This type can be operated directly from integrated circuits.
The 2N6786 is supplied in the JEDEC TO-205AF (Low Profile TO-39) metal package.
• 1.25A, 400V
• rDS(on) =3.6Ω
• SOAis Power-Dissipation Limited
• Nanosecond SwitchingSpeeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device