2SB613 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
2SB613
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min)
• High Power Dissipation- : PC= 150W(Max)@TC=25℃
• High Current Capability
• Complement to Type 2SD583
APPLICATIONS
• Designed for high power amplifier and switching applications
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