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2SB613 数据手册 ( 数据表 ) - New Jersey Semiconductor

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零件编号
2SB613

产品描述 (功能)

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2 Pages

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78.9 kB

生产厂家
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min)
• High Power Dissipation- : PC= 150W(Max)@TC=25℃
• High Current Capability
• Complement to Type 2SD583

APPLICATIONS
• Designed for high power amplifier and switching applications

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零件编号
产品描述 (功能)
PDF
生产厂家
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