2SB697 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
2SB697
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEo= -140V(Min)
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2SD733
APPLICATIONS
• Designed forAF power amplifier applications.
• Recommended for output stage of SOW power amplifier.
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