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2SJ599-Z 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SJ599 image

零件编号
2SJ599-Z

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9 Pages

File Size
155.7 kB

生产厂家
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


FEATURES
• Low on-state resistance:
  RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A)
  RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A)
• Low input capacitance:
  Ciss= 1300 pF TYP. (VDS= –10 V, VGS= 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package

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零件编号
产品描述 (功能)
PDF
生产厂家
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
NEC => Renesas Technology

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