ACE633FM+H 数据手册 ( 数据表 ) - ACE Technology Co., LTD.
零件编号
ACE633FM+H
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10 Pages
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1.1 MB
生产厂家
ACE Technology Co., LTD.
Description
The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
FEATUREs
● N-Channel
VDS(V)=60V
ID=5A
RDS(ON)
<35mΩ (VGS=10V)
<40mΩ (VGS=4.5V)
● P-Channel
VDS(V)=-60V
ID=-3.5A
RDS(ON)
<75mΩ (VGS=-10V)
<90mΩ (VGS=-4.5V)
零件编号
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生产厂家
60V Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
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