GENERAL DESCRIPTION
ALD110814/ALD110914 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +1.40V
• Matched MOSFET-to-MOSFET characteristics
• Tight lot-to-lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents

APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches