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Alpha and Omega Semiconductor
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General Description
The AOD609/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AOD609 and AOD609L are electrically identical.
-RoHS Compliant
-AOD609L is Halogen Free
FEATUREs
n-channel
VDS (V) = 40V, ID = 12A (VGS=10V)
RDS(ON)< 30mΩ (VGS=10V)
RDS(ON)< 40mΩ (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
RDS(ON)< 45mΩ (VGS= -10V)
RDS(ON)< 66mΩ (VGS= -4.5V)
Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor