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ATF-21186-TR1 数据手册 ( 数据表 ) - HP => Agilent Technologies

ATF-21186-STR image

零件编号
ATF-21186-TR1

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8 Pages

File Size
61.8 kB

生产厂家
HP
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Description
Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over the VHF, UHF, and microwave frequency ranges. High gain with two volt operation makes this part attractive for low voltage, battery operated systems. The low noise figure is appropriate for commercial systems demanding good sensitivity, such as GPS receiver front-ends and MMDS television receivers. The output power is sufficient for use as the driver stage in many hand-held transceivers operating in the 900␣ MHz through 2.4 GHz bands, including in cellular phones, PCN, and ISM band spread spectrum applications.


FEATUREs
• Low Noise Figure: 0.5 dB Typ. @ 2 GHz
• High Output Power: 19 dBm Typ. P1dB @ 2 GHz
• High MSG: 13.5 dB Typ. @ 2 GHz
• Low Cost Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]

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零件编号
产品描述 (功能)
PDF
生产厂家
0.5–12 GHz General Purpose Gallium Arsenide FET
HP => Agilent Technologies
0.5–10 GHz General Purpose Gallium Arsenide FET
HP => Agilent Technologies
0.5–10 GHz General Purpose Gallium Arsenide FET
HP => Agilent Technologies
2–16 GHz General Purpose Gallium Arsenide FET
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2–16 GHz General Purpose Gallium Arsenide FET
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0.5–6 GHz Low Noise Gallium Arsenide FET
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2–8 GHz Medium Power Gallium Arsenide FET
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1-16 Ghz Low Noise Gallium Arsenide FET
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0.5–12 GHz Low Noise Gallium Arsenide FET
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Gallium Arsenide
Motorola => Freescale

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