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B20NM60 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
B20NM60

Other PDF
  2005  

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page
18 Pages

File Size
437 kB

生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Features
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Applications
■ Switching applications

 

零件编号
产品描述 (功能)
PDF
生产厂家
N-CHANNEL 600V - 0.075Ω - 47A TO-247 MDmesh™Power MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh™ MOSFET
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N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
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N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
New Jersey Semiconductor
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
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N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
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N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh™ Power MOSFET
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N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh™ Power MOSFET ( Rev : 2006 )
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N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics

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