DESCRIPTION
This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche character
istics. The adoption of the Company’s proprietary strip technique yields overall performances that are significantly better than that of similar competition’s products.

TYPICAL RDS(on) = 0.075Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.