DESCRIPTION
NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap.

FEATURES
• Withstands full load mismatch
• Emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Transmitting applications in the UHF range with a nominal supply voltage up to 28 V.