Description:
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the UHF and VHF range for nominal supply voltages up to 13.5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.

FEATUREs:
    The transistor is housed in a 1/4" capstan envelope with a ceramic cap.