Central Semiconductor Corp - CP302 PDF 数据手册 , CP302 数据表

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CP302 数据手册 ( 数据表 ) - Central Semiconductor Corp

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CP302

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Small Signal Transistor NPN - Silicon RF Transistor Chip

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Central Semiconductor Corp

PROCESS DETAILS

Process EPITAXIAL PLANAR)
Die Size 14.5 x 14.5 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 2.3 x 2.3 MILS
Emitter Bonding Pad Area 2.5 x 2.3 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å

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产品描述 (功能)

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CP214

Small Signal Transistor NPN - Silicon RF Transistor Chip

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Central Semiconductor

CP317

Small Signal Transistor NPN - RF Transistor Chip ( Rev : 2002 )

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Central Semiconductor

CP223

Small Signal Transistor NPN - RF Transistor Chip

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Central Semiconductor

CP317V

Small Signal Transistor NPN - RF Transistor Chip

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Central Semiconductor Corp

CP243

Small Signal Transistor NPN - RF Transistor Chip

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Central Semiconductor

CP317

Small Signal Transistor NPN - RF Transistor Chip

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Central Semiconductor

CP229

Small Signal Transistors NPN - RF Transistor Chip

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Central Semiconductor

CP617

Small Signal Transistor PNP - Silicon RF Transistor Chip

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Central Semiconductor

CP616

Small Signal Transistor PNP - Silicon RF Transistor Chip

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Central Semiconductor

CP705

Small Signal Transistor PNP - Silicon RF Transistor Chip

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Central Semiconductor

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