CP608 数据手册 ( 数据表 ) - Central Semiconductor
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CP608
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PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 66 x 66 MILS
Die Thickness 12.5 ± 1.0 MILS
Base Bonding Pad Area 12 x 24 MILS
Emitter Bonding Pad Area 11 x 14 MILS
Top Side Metalization Al - 50,000Å
Back Side Metalization Cr/Ni/Ag - 16,000Å
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