CPD48V 数据手册 ( 数据表 ) - Central Semiconductor
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CPD48V
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 13.8 x 13.8 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Area 9.0 x 9.0 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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