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CY7C1339F-100BGC 数据手册 ( 数据表 ) - Cypress Semiconductor

CY7C1339F image

零件编号
CY7C1339F-100BGC

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17 Pages

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411.4 kB

生产厂家
Cypress
Cypress Semiconductor Cypress

Functional Description[1]
The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).


FEATUREs
• Registered inputs and outputs for pipelined operation
• 128K × 32 common I/O architecture
• 3.3V core power supply
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
   — 2.6 ns (for 250-MHz device)
   — 2.6 ns (for 225-MHz device)
   — 2.8 ns (for 200-MHz device)
   — 3.5 ns (for 166-MHz device)
   — 4.0 ns (for 133-MHz device)
   — 4.5 ns (for 100-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP and 119-ball BGA packages
• “ZZ” Sleep Mode Option

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