EFA018A-70 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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EFA018A-70
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +18.5dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
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