EFA024A 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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EFA024A
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• +18.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz
• 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
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