VCES= 600V
VCE(on) typ. =1.59V
@VGE= 15V, IC= 17A

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

FEATUREs
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED™ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package

Benefits
• Generation -4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's