INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

FEATUREs
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
• New IGBT design provides tighter parameter distribution and higher efficiency than previous  generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free

Benefits
• Higher switching frequency capability than competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require
less/no snubbing