Description :
The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 , an active HIGH CE2, an active LOW OE, and Tristate I/O’s. This device has an automatic powerdown mode feature when deselected.
Writing to the device is accomplished by taking chip Enable 1 ( CE1 ) with Write Enable ( WE ) LOW, and Chip Enable 2 (CE2) HIGH. Reading from the device is performed by taking Chip Enable 1 ( CE1 ) with Output Enable ( OE ) LOW while Write Enable ( WE ) AND Chip Enable 2 (CE2) is HIGH. The I/O pins are placed in a high-impedance state when the device is deselected : the outputs are disabled during a write cycle.
The GLT6100L08 comes with a 2V data retention feature and Lower Standby Power. The GLT6100L08 is available in a 32-pin TSOPI / sTSOP / 48-fpBGA packages.

FEATUREs :
* Low-power consumption.
   -active: 30mA at 55ns.
   -Stand by :
5 mA (CMOS input / output)
1 mA (CMOS input / output, SL)
* Single +2.7 to 3.3V Power Supply.
* Equal access and cycle time.
* 55/70/85/100 ns access time.
* Easy memory expansion with CE1 , CE2 and OE inputs.
* 2.0V data retention mode.
* TTL compatible, Tri-state input/output.
* Automatic power-down when deselected.