DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES
As a remote variable resistor
• ≤ 100Ω to ≥ 300 MΩ
• ≥ 99.9% linearity
• ≤ 15 pF shunt capacitance
• ≥ 100 GΩ I/O isolation resistance

As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff ≤ 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
   – Ordering option ‘300’ (e.g. H11F1.300)
  
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching

As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion