General Description
The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

FEATUREs
As a remote variable resistor:
■≤100Ωto ≥300MΩ
■≥99.9% linearity
■≤15pF shunt capacitance
■≥100GΩI/O isolation resistance
As an analog switch:
■Extremely low offset voltage
■60 Vpk-pksignal capability
■No charge injection or latch-up
■ton, toff≤15µS
■UL recognized (File #E90700)

APPLICATIONs
As a remote variable resistor:
■Isolated variable attenuator
■Automatic gain control
■Active filter fine tuning/band switching As an analog switch:
■Isolated sample and hold circuit
■Multiplexed, optically isolated A/D conversion