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HM62256BLTM-7SL 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

HM62256B image

零件编号
HM62256BLTM-7SL

产品描述 (功能)

Other PDF
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page
20 Pages

File Size
154.2 kB

生产厂家
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word × 8-bit. It realizes higher
performance and low power consumption by employing 0.8 µm Hi-CMOS process technology.  The device, packaged in 8 × 14 mm TSOP, 8 × 13.4 mm TSOP with thickness of 1.2 mm, 450 mil SOP (foot print pitch width), 600 mil plastic DIP, or 300 mil plastic DIP, is available for high density mounting.  It offers low power standby power dissipation; therefore, it is suitable for battery backup systems.


FEATUREs
•  Single 5.0 V supply:  5.0 V ± 10%
•  Access time: 55 ns/70 ns/85 ns (max)
•  Power dissipation:
 Active:  25 mW (typ) (f = 1 MHz)
 Standby:  1.0 µW (typ)
•  Completely static memory
 No clock or timing strobe required
•  Equal access and cycle times
•  Common data input and output
 Three state output
•  Directly TTL compatible all inputs and outputs
•  Battery backup operation

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零件编号
产品描述 (功能)
PDF
生产厂家
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) ( Rev : 2013 )
Renesas Electronics
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit)/256k EEPROM (32-kword × 8-bit)
Renesas Electronics
Two-wire serial interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit)
Hitachi -> Renesas Electronics
64 k SRAM (8-kword × 8-bit)
Hitachi -> Renesas Electronics
64 k SRAM (8-kword × 8-bit)
Hitachi -> Renesas Electronics
256 k EEPROM (32-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics

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