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HM62V8512C 数据手册 ( 数据表 ) - Renesas Electronics

HM62V8512C image

零件编号
HM62V8512C

产品描述 (功能)

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page
20 Pages

File Size
221.4 kB

生产厂家
Renesas
Renesas Electronics Renesas

Description
The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512C is suitable for battery backup system.


FEATUREs
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 55 ns (max)
• Power dissipation
- Active: 6.0 mW/MHz (typ)
- Standby: 2.4 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs
• Battery backup operation

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零件编号
产品描述 (功能)
PDF
生产厂家
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword ×8-bit)
Renesas Electronics
4 M SRAM (512-kword x 8-bit)
Hitachi -> Renesas Electronics

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