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HM62W8512B 数据手册 ( 数据表 ) - Renesas Electronics

HM62W8512B image

零件编号
HM62W8512B

产品描述 (功能)

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page
18 Pages

File Size
83.8 kB

生产厂家
Renesas
Renesas Electronics Renesas

Description
The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62W8512B is suitable for battery backup system.
   
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 55/70 ns (max)
• Power dissipation
    - Active: 16.5 mW/MHz (typ)
    - Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
   

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零件编号
产品描述 (功能)
PDF
生产厂家
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword ×8-bit)
Renesas Electronics
4 M SRAM (512-kword x 8-bit)
Hitachi -> Renesas Electronics

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