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HY51V18163HG-5 数据手册 ( 数据表 ) - Hynix Semiconductor

HY51V18163HG-5 image

零件编号
HY51V18163HG-5

产品描述 (功能)

Other PDF
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page
12 Pages

File Size
105.8 kB

生产厂家
Hynix
Hynix Semiconductor Hynix

DESCRIPTION
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.


FEATURES
•  Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 42pin plastic SOJ / 44(50)pin TSOP-II(400mil)
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)
• 2CAS byte control

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零件编号
产品描述 (功能)
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