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IRF5852TRPBF 数据手册 ( 数据表 ) - International Rectifier

IRF5852PBF image

零件编号
IRF5852TRPBF

产品描述 (功能)

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9 Pages

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187.2 kB

生产厂家
IR
International Rectifier IR

Description
These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.

• Ultra Low On-Resistance
• Dual N-Channel MOSFET
• Surface Mount
• Available in Tape & Reel
• Low Gate Charge
• Lead-Free
• Halogen-Free

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零件编号
产品描述 (功能)
PDF
生产厂家
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