Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management.

● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.1mm)
● Available in Tape & Reel