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IRG4BC30W-S 数据手册 ( 数据表 ) - International Rectifier

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零件编号
IRG4BC30W-S

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8 Pages

File Size
174.3 kB

生产厂家
IR
International Rectifier IR

Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

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零件编号
产品描述 (功能)
PDF
生产厂家
Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9.0A
International Rectifier
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A ( Rev : 2016 )
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
Vishay Semiconductors
600V Insulated Gate Bipolar Transistor
Unspecified
20A, 600V Insulated Gate Bipolar Transistor
Unspecified
40A, 600V Insulated Gate Bipolar Transistor
Unspecified
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
Toshiba

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